magnetron IEEE PAPER
Transparent p-type SnOx thin film transistors produced by reactive rfmagnetron sputtering followed by low temperature annealing
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P-type thin-film transistors TFTs using room temperature sputtered SnOx x2 as a transparent oxide semiconductor have been produced. The SnOx films show p-type conduction presenting a polycrystalline structure composed with a mixture of tetragonal-Sn and-SnOx
Room-temperature ferromagnetism in (Mn, N)-codoped ZnO thin films prepared by reactive magnetron cosputtering
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(Mn, N)-codoped ZnO films were grown on fused silica substrates by reactive magnetron cosputtering. X-ray diffraction measurements reveal that the films have the single-phase wurtzite structure with c-axis preferred orientation. X-ray photoelectron spectroscopy
Si-rich/SiO2 nano structured multilayers by reactive magnetron sputtering
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Silicon-rich SR/SiO2 multilayered systems were produced by reactive magnetron sputtering, through an approach based on the ability of hydrogen, when alternatively mixed to the argon of the plasma,target. Optimum values of
Inuence of rapid heating with infrared radiation on RF magnetron-sputtered calcium phosphate coatings
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Abstract: This study evaluated the effect of rapid heating with infrared radiation on the physico chemical and morphological properties of radio frequent (RF) magnetron- sputtered calcium phosphate (Ca P) coatings. About 2.5 um thick Ca P coatings were
Epitaxial growth of ZnO thin films on R-plane sapphire substrate by radio frequency magnetron sputtering
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ZnO thin films were deposited on a R-plane sapphire substrate. The effects of the thermal energy and the kinetic energy of the sputtered species on the growth of ZnO thin films were investigated. By varying the substrate temperature, chamber pressure, and radio
Electrical tuning of magnetism in Fe3O4/PZN-PT multiferroic heterostructures derived by reactive magnetron sputtering
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Electric field (E-field) tuning of magnetism has become an exciting new frontier due to its wide range of potential applications in information storage, sensors, and novel electrostatically tunable microwave magnetic devices such as filters, resonators, inductors, 2 and Ar ambient. X-ray diffraction indicated that growth of ZrN with a preferred (111) orientation over Si (100) was achieved. The resistivity of the films varies from 200 µOcm to 15 µOcm depending on the N 2 content in the working gas. The square resistance of the
Improvement in dye-sensitized solar cells with a ZnO-coated TiO2 electrode by rf magnetron sputtering
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A surface modification method was carried out by rf magnetron sputtering to fabricate ZnO- coated TiO2 electrodes (TiO2/ZnO) for improving the performance of dye-sensitized solar cells. The TiO2/ZnO electrodes had been characterized by x-ray photoelectron
Electrical resistivity of copper oxide thin films prepared by reactive magnetronsputtering
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AbstrAct Purpose: Investigation the effect of varying rf power and oxygen flow rates during deposition on the electrical properties of copper oxide thin films prepared by reactive magnetron sputtering Design/methodology/approach: The films were characterised by
Discharge in dual magnetron sputtering system
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Abstract:Dual magnetron sputtering system represents a very effective tool, particularly for reactive magnetron sputtering of insulated thin films. For efficient deposition process, however, it is very important to optimize electrical and magnetic field of the magnetron.
Preionised pulsed magnetron discharges for ionised physical vapour deposition
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Ionised physical vapour deposition (IPVD) has recently become an efficient method for improving properties of thin layers deposited by magnetron sputtering techniques. Various procedures were investigated using additional vapour ionisation using RF [1] or
Development of preferred orientation in polycrystalline NaCl-structure d-TaN layers grown by reactive magnetron sputtering: Role of low-energy ion surface
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Polycrystalline B1 aCl-structure-TaN thin films are presently used in a variety of applications including hard wear-resistant coatings on tools, diffusion barriers in integrated circuits, resistors, and mask layers for x-ray lithography. The physical properties of-TaN
Observation of Ti4+ ions in a high power impulse magnetron sputtering plasma
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Abstract Multiply charged titanium ions including Ti4+ were observed in high power impulse magnetron sputtering discharges. Mass/charge spectrometry was used to identify metal ion species, and titanium ions up to Ti4+ were identified by isotope-induced broadening at
Evaluation of plasma-spray and magnetron-sputter Ca P coated implants: An in viva experiment
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The bone response to different plasma-spray and magnetron sputter calcium phosphate (Ca I')~ coated implants was evaluated in a rabbit animal model. Four types of Ca-P coatings have been investigated: a plasma-spray Ca I'coating (I-IAPS), a heat treated
Deposition of zinc oxide layers by high-power impulse magnetron sputtering
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High-power impulse magnetron sputtering (HiPIMS) is an attractive technique to grow thin films since it allows one to highly ionize the sputtered metallic vapor. 1, 2 In such circumstances, ion bombardment of the growing film is intense and one can expect to
Cylindrical magnetron sputtering system for coating solar
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Construction of all-glass concentric tubular evacuated solar energy collectors involves the coating of glass tubes with a selective absorbing surface which must have excellent adhe- sion and durability at elevated temperatures in vacuum. Evaporated selective surfaces
p-type Zn Mg x O films with Sb doping by radio-frequency magnetronsputtering
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Sb-doped Zn1- xMgxO films were grown on c-plane sapphire substrates by radio-frequency magnetron sputtering. The p-type conduction of the films (0.05x 0.13) was confirmed by Hall measurements, revealing a hole concentration of 1015 1016 cm- 3 and a mobility of
Copper nitride thin film prepared by reactive radio-frequency magnetronsputtering
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Copper nitride (Cu3N) thin films were deposited on glass substrates by reactive radio- target in a nitrogen/argon atmosphere. The deposition rate of the films gradually decreased with increasing nitrogen flow rate. The Since Liu and Cohen [1] predicted that a type of crystalline carbon-nitride,, was comparable with or even harder than diamond and further studies showed that it could have some attractive features in industrial and micro-electronic applications, many investigators
Ferroelectric and piezoelectric properties of Na0. 52K0. 48NbO3 thin films prepared by radio frequency magnetron sputtering
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Ferroelectric Na0. 52K0. 48NbO3 NKN thin film on Pt/Ti/SiO2/Si substrate was prepared using the radio frequency magnetron sputtering method. The single phase and grain
Microstructural evolution and Poisson ratio of epitaxial ScN grown on TiN (001)/MgO (001) by ultrahigh vacuum reactive magnetron sputter deposition
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Transition-metal TM nitrides are well known for their remarkable physical properties including high hardness and mechanical strength, chemical inertness, and electrical resistivities that vary from metallic to semiconducting. As a result, they are widely studied
Preparation and characterization of ZnO particles embedded in SiO2 matrix by reactive magnetron sputtering
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ZnO particles embedded in SiO2 thin films were prepared by a radio-frequency magnetron sputtering technique. X-ray diffraction (XRD) and optical-absorption spectra showed that ZnO particles with hexagonal wurtzite structure had been embedded in the SiO2 matrix,
E ect of Oxygen on the Optical and the Electrical Properties of Amorphous InGaZnO Thin Films Prepared by RF Magnetron Sputtering
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The thin film transistor (TFT) has been widely adopted as a switching element of flat panel displays, such as active-matrix liquid crystal displays (AML-CDs) and active-matrix organic light emitting diode (AMOLED) displays. Among the materials used for the active channel
Stable plasma configurations in a cylindrical magnetron discharge
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Transition between different plasma configurations is studied in a system with negative target in crossed EB fields. It was found that the diffuse plasma torus target in relatively small magnetic field (0.target
Structural and optical properties of ZnO thin films grown by RF magnetronsputtering on Si substrates
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Zinc oxide (ZnO) is a II-VI compound semiconductor with hexagonal wurtzite structure and a wide direct band gap similar to GaN and ZnSe. ZnO films have optical transparency, high reflection constant, large piezoelectric constant, and ultraviolet (UV) emission properties.
Thin-film transistors based on ZnO fabricated by using radio-frequencymagnetron sputtering
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High-performance thin-film transistors (TFTs) based on new materials have been investigated to achieve the features of larger diagonal size, greater transparency, more mechanical robustness, more pixels, and lighter weight for high-resolution electronic
Electrical and optical properties of CNx (0= x= 0.25) films deposited by reactivemagnetron sputtering
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The C–N system has been, for the last decade, the subject of considerable interest concerning methods of thin-film preparation and material characterization. In particular, amorphous textured carbon-nitride (CNx) films with low-N concentrations have found
Two-dimensional growth of continuous Cu2O thin films by magnetronsputtering
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We present results on the in situ, two-dimensional growth (as opposed to the more commonly encountered island-coalescence mechanism) of continuous epitaxial Cu2O films on MgO (011)targets in an oxygen/
Mode conversion in a magnetron with axial extraction of radiation
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Abstract:We demonstrate the ability to form simple radiation patterns from a relativistic magnetron with axial extraction. This is achieved by tapering onto a conical antenna only those cavities of the anode block that correspond to the symmetry of the radiated modes. NiO thin films are very attractive for use as an antiferromagnetic layer [1], p-type transparent conducting films [2], in electrochromic devices [3, 4] and functional sensor layer for chemical sensors [5], due to their excellent chemical stability, as well as optical, electrical and
ZnO thin films prepared by high pressure magnetron sputtering
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Undoped and Al-doped ZnO films were prepared by a high pressure dc magnetron sputtering technique on glass substrates at a temperature of 470 K. Plasma-emission monitoring was used to stabilize oxygen flow to the deposition chamber. The effect of the
Optical investigation of p-type ZnO epilayers doped with different phosphorus concentrations by radio-frequency magnetron sputtering
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Optical properties of p-type ZnO epilayers doped with different amounts of phosphorus by radio-frequency magnetron sputtering are investigated by x-ray diffraction, temperature dependent photoluminescence PL, and time-resolved PL techniques. Bound exciton, free
Role of energy in low-temperature high-rate formation of hydrophilic TiO2 thin films using pulsed magnetron sputtering
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The article reports on low-temperature high-rate deposition of hydrophilic TiO2 thin films using dc pulse dual magnetron DM sputtering in an Ar+ O2 mixture on unheated glass substrates. DM is operated in a bipolar asymmetric mode and is equipped with Ti 99.5%
Piezoelectric properties of ZnO films on a sapphire substrate deposited by an RF-magnetron-mode ECR sputtering system
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Compared to conventional RF magnetron sputtering systems, electron cyclotron resonance (ECR) sputtering systems are characterized by the ability to generate high-density plasma under low gas pressure.(1120)-plane oriented epitaxial ZnO lms were deposited on an R
Magnetron priming by multiple cathodes
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A relativistic magnetron priming technique using multiple cathodes is simulated with a three- dimensional, fully electromagnetic, particle-in-cell code. This technique is based on electron emission from N/2 individual cathodes in an N-cavity magnetron to prime the mode. In the
Microstructural properties of phosphorus-doped p-type ZnO grown by radio-frequency magnetron sputtering
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Phosphorus (P)-doped ZnO thin films were grown by radio-frequency magnetron sputtering to study the microstructural properties of p-type ZnO. As-grown P-doped ZnO, a semi- insulator, was converted to p-type ZnO after being annealed at 800 C in an N2 ambient. X-
Properties of superconducting nd1+ xba2- xcu3o7- d thin films deposited by dcmagnetron sputtering
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We report the superconducting properties of Nd1xBa2xCu3O7 thin films deposited by dc magnetron sputtering from stoichiometric Nd1Ba2Cu3O7 and off-stoichiometric Nd1. 12Ba1. targets. Highly epitaxial c-axis oriented samples with thicknesses ranging from
Reactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti-Zr-N and Ti-Ta-N
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Ternary transition metal nitride thin films, with thickness up to 300 nm, were deposited by dc reactive magnetron cosputtering in Ar–N2 plasma discharges at 300 C on Si substrates. Two systems were comparatively studied, Ti–Zr–N and Ti–Ta–N, as representative of
Size controlled synthesis of Ge nanocrystals in SiO2 at temperatures below 400 C using magnetron sputtering
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A simple and silicon process-compatible technique is reported for the synthesis of Ge nanocrystals Ge-ncs at low temperatures below 400 C, which is much lower than the typical growth temperatures. The Ge-ncs were found to form only within a temperature window
Effect of pressure on the properties of phosphorus-doped p-type ZnO thin films grown by radio frequency-magnetron sputtering
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We report the effect of pressure on the surface morphology, electrical and optical properties of phosphorus (P)-doped p-type ZnO grown by radio frequency magnetron sputtering. The nanorod structures of P-doped ZnO films became dense and flat with decreasing pressure
magnetron radar
Magnetron based radar Systems for millimeter wavelength band-modern approaches and prospects
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Historically magnetrons were one of the first devices used to build radar systems. Namely, successful development and utilization of the magnetrons in radars had assisted essentially Allies to win battle for air and see during W . And definitely they
Case study of a front refractivity signature with an operational radar and the Fabry algorithm modified for a magnetron transmitter
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The ARAMIS operational radar network ofFrance deployed five S-band and 2 X-band over the Mediterranean Arc in the Southern region of France. This high coverage density is mainly due to the high occurrence of severe storms during the autumn season in this area.
Inter-pulse coding and coherent-on-receive modifications of magnetron-based marine radar experimental results
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Abstract:Magnetron-based, low-cost marine radar was modified. In the transmitter the pulse repetition interval (PRI) was coded periodically. In the receiver a coherent-on-receive detection option was added. The coding allows extension of the unambiguous delay (
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